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| Datasheet | HGTG10N120BND |
| File Size | 230.65 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGTG10N120BND |
| Description | IGBT 1200V 35A 298W TO247 |
HGTG10N120BND - ON Semiconductor
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HGTG10N120BND | ON Semiconductor | IGBT 1200V 35A 298W TO247 | 1290 More on Order |
URL Link
www.oemstron.com/datasheet/HGTG10N120BND
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 298W Switching Energy 850µJ (on), 800µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 23ns/165ns Test Condition 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) 70ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |