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| Datasheet | HGTP12N60C3 |
| File Size | 172.1 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGTP12N60C3 |
| Description | IGBT 600V 24A 104W TO220AB |
HGTP12N60C3 - ON Semiconductor
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HGTP12N60C3 | ON Semiconductor | IGBT 600V 24A 104W TO220AB | 224 More on Order |
URL Link
www.oemstron.com/datasheet/HGTP12N60C3
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 24A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 12A Power - Max 104W Switching Energy 380µJ (on), 900µJ (off) Input Type Standard Gate Charge 48nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |