Datasheet | HUF75329G3 |
File Size | 249.14 KB |
Total Pages | 10 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | HUF75329G3, HUF75329S3, HUF75329P3 |
Description | MOSFET N-CH 55V 49A TO-247, MOSFET N-CH 55V 49A D2PAK, MOSFET N-CH 55V 49A TO-220AB |
HUF75329G3 - ON Semiconductor
The Products You May Be Interested In
HUF75329G3 | ON Semiconductor | MOSFET N-CH 55V 49A TO-247 | 500 More on Order |
|
HUF75329S3 | ON Semiconductor | MOSFET N-CH 55V 49A D2PAK | 116 More on Order |
|
HUF75329P3 | ON Semiconductor | MOSFET N-CH 55V 49A TO-220AB | 498 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 49A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 25V FET Feature - Power Dissipation (Max) 128W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 49A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 25V FET Feature - Power Dissipation (Max) 128W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 49A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 25V FET Feature - Power Dissipation (Max) 128W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |