
Datasheet | HUF75545S3 |
File Size | 805.77 KB |
Total Pages | 10 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | HUF75545S3, HUF75545S3S, HUF75545P3, HUF75545S3ST |
Description | MOSFET N-CH 80V 75A TO-262AA, MOSFET N-CH 80V 75A D2PAK, MOSFET N-CH 80V 75A TO-220AB, MOSFET N-CH 80V 75A D2PAK |
HUF75545S3 - ON Semiconductor










The Products You May Be Interested In
![]() |
HUF75545S3 | ON Semiconductor | MOSFET N-CH 80V 75A TO-262AA | 138 More on Order |
![]() |
HUF75545S3S | ON Semiconductor | MOSFET N-CH 80V 75A D2PAK | 352 More on Order |
![]() |
HUF75545P3 | ON Semiconductor | MOSFET N-CH 80V 75A TO-220AB | 485 More on Order |
![]() |
HUF75545S3ST | ON Semiconductor | MOSFET N-CH 80V 75A D2PAK | 3834 More on Order |
URL Link
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |