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| Datasheet | IDB09E60ATMA1 |
| File Size | 418.29 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IDB09E60ATMA1 |
| Description | DIODE GEN PURP 600V 19.3A TO263 |
IDB09E60ATMA1 - Infineon Technologies
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IDB09E60ATMA1 | Infineon Technologies | DIODE GEN PURP 600V 19.3A TO263 | 344 More on Order |
URL Link
www.oemstron.com/datasheet/IDB09E60ATMA1
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 19.3A (DC) Voltage - Forward (Vf) (Max) @ If 2V @ 9A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 50µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package PG-TO263-3 Operating Temperature - Junction -55°C ~ 175°C |