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IPB100N06S3L-04 Datasheet

IPB100N06S3L-04 Cover
DatasheetIPB100N06S3L-04
File Size194.84 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPB100N06S3L-04, IPP100N06S3L-04, IPI100N06S3L04XK
Description MOSFET N-CH 55V 100A TO-263, MOSFET N-CH 55V 100A TO-220, MOSFET N-CH 55V 100A TO-262

IPB100N06S3L-04 - Infineon Technologies

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IPB100N06S3L-04 IPB100N06S3L-04 Infineon Technologies MOSFET N-CH 55V 100A TO-263 155

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IPP100N06S3L-04 IPP100N06S3L-04 Infineon Technologies MOSFET N-CH 55V 100A TO-220 458

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IPI100N06S3L04XK IPI100N06S3L04XK Infineon Technologies MOSFET N-CH 55V 100A TO-262 423

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URL Link

IPB100N06S3L-04

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

362nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

17270pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP100N06S3L-04

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

362nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

17270pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI100N06S3L04XK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

362nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

17270pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA