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| Datasheet | IPC60N04S4L06ATMA1 |
| File Size | 196.53 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPC60N04S4L06ATMA1 |
| Description | MOSFET N-CH 8TDSON |
IPC60N04S4L06ATMA1 - Infineon Technologies
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URL Link
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Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 63W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-23 Package / Case 8-PowerVDFN |