Semiconductors
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Optoelectronics
| Datasheet | IPD06P005NATMA1 |
| File Size | 997.94 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPD06P005NATMA1 |
| Description | TRENCH 40<-<100V |
IPD06P005NATMA1 - Infineon Technologies
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IPD06P005NATMA1 | Infineon Technologies | TRENCH 40<-<100V | 134 More on Order |
URL Link
www.oemstron.com/datasheet/IPD06P005NATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 30V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |