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| Datasheet | IPD50R1K4CEBTMA1 |
| File Size | 1,624.95 KB |
| Total Pages | 14 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPD50R1K4CEBTMA1 |
| Description | MOSFET N-CH 500V 3.1A PG-TO-252 |
IPD50R1K4CEBTMA1 - Infineon Technologies
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URL Link
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Manufacturer Infineon Technologies Series CoolMOS™ CE FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V Vgs(th) (Max) @ Id 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |