Datasheet | IPD60R800CEATMA1 |
File Size | 1,190.22 KB |
Total Pages | 16 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IPD60R800CEATMA1, IPA60R800CEXKSA1, IPD60R800CEAUMA1 |
Description | MOSFET N-CH 600V TO-252-3, MOSFET N-CH 600V TO-220-3, CONSUMER |
IPD60R800CEATMA1 - Infineon Technologies
The Products You May Be Interested In
IPD60R800CEATMA1 | Infineon Technologies | MOSFET N-CH 600V TO-252-3 | 149 More on Order |
|
IPA60R800CEXKSA1 | Infineon Technologies | MOSFET N-CH 600V TO-220-3 | 102 More on Order |
|
IPD60R800CEAUMA1 | Infineon Technologies | CONSUMER | 475 More on Order |
URL Link
Infineon Technologies Manufacturer Infineon Technologies Series CoolMOS™ CE FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Infineon Technologies Manufacturer Infineon Technologies Series CoolMOS™ CE FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V FET Feature - Power Dissipation (Max) 27W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |
Infineon Technologies Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |