Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPG20N06S3L-23 |
| File Size | 163.24 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPG20N06S3L-23 |
| Description | MOSFET 2N-CH 55V 20A TDSON-8 |
IPG20N06S3L-23 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IPG20N06S3L-23
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 23mOhm @ 16A, 10V Vgs(th) (Max) @ Id 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V Power - Max 45W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4 |