Datasheet | IPI100N04S303AKSA1 |
File Size | 196.69 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IPI100N04S303AKSA1, IPP100N04S303AKSA1, IPB100N04S303ATMA1 |
Description | MOSFET N-CH 40V 100A TO262-3, MOSFET N-CH 40V 100A TO220-3, MOSFET N-CH 40V 100A TO263-3 |
IPI100N04S303AKSA1 - Infineon Technologies
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IPI100N04S303AKSA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | 444 More on Order |
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IPP100N04S303AKSA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 | 478 More on Order |
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IPB100N04S303ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | 1592 More on Order |
URL Link
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 25V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 25V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 25V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |