Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPI120N04S4-01M |
| File Size | 159.05 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPI120N04S4-01M, IPP120N04S401AKSA1 |
| Description | MOSFET N-CH TO262-3, MOSFET N-CH 40V 120A TO220-3-1 |
IPI120N04S4-01M - Infineon Technologies
The Products You May Be Interested In
 |
IPI120N04S4-01M | Infineon Technologies | MOSFET N-CH TO262-3 | 405 More on Order |
 |
IPP120N04S401AKSA1 | Infineon Technologies | MOSFET N-CH 40V 120A TO220-3-1 | 497 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V FET Feature - Power Dissipation (Max) 188W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |