Datasheet | IPI16CNE8N G |
File Size | 493.14 KB |
Total Pages | 12 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IPI16CNE8N G, IPD16CNE8N G, IPP16CNE8N G |
Description | MOSFET N-CH 85V 53A TO262-3, MOSFET N-CH 85V 53A TO252-3, MOSFET N-CH 85V 53A TO-220 |
IPI16CNE8N G - Infineon Technologies
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URL Link
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 53A, 10V Vgs(th) (Max) @ Id 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 40V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 53A, 10V Vgs(th) (Max) @ Id 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 40V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 53A, 10V Vgs(th) (Max) @ Id 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 40V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |