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| Datasheet | IPP08CN10L G |
| File Size | 260.09 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPP08CN10L G |
| Description | MOSFET N-CH 100V 98A TO220-3 |
IPP08CN10L G - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IPP08CN10L G
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 98A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 98A, 10V Vgs(th) (Max) @ Id 2.4V @ 130µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8610pF @ 50V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |