Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPP100P03P3L-04 |
| File Size | 191.36 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPP100P03P3L-04, IPI100P03P3L-04 |
| Description | MOSFET P-CH 30V 100A TO220-3, MOSFET P-CH 30V 100A TO262-3 |
IPP100P03P3L-04 - Infineon Technologies
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2.1V @ 475µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) +5V, -16V Input Capacitance (Ciss) (Max) @ Vds 9300pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2.1V @ 475µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) +5V, -16V Input Capacitance (Ciss) (Max) @ Vds 9300pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |