Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPP80N04S3H4AKSA1 |
| File Size | 169.24 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | IPP80N04S3H4AKSA1, IPI80N04S3H4AKSA1, IPB80N04S3H4ATMA1 |
| Description | MOSFET N-CH 40V 80A TO220-3, MOSFET N-CH 40V 80A TO262-3, MOSFET N-CH 40V 80A TO263-3 |
IPP80N04S3H4AKSA1 - Infineon Technologies
The Products You May Be Interested In
 |
IPP80N04S3H4AKSA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO220-3 | 436 More on Order |
 |
IPI80N04S3H4AKSA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | 382 More on Order |
 |
IPB80N04S3H4ATMA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 | 493 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 65µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 65µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 65µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |