Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPP80N06S3L-08 |
| File Size | 185.31 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPP80N06S3L-08, IPI80N06S3L-08 |
| Description | MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A TO-262 |
IPP80N06S3L-08 - Infineon Technologies
The Products You May Be Interested In
 |
IPP80N06S3L-08 | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | 207 More on Order |
 |
IPI80N06S3L-08 | Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | 254 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 43A, 10V Vgs(th) (Max) @ Id 2.2V @ 55µA Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6475pF @ 25V FET Feature - Power Dissipation (Max) 105W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 43A, 10V Vgs(th) (Max) @ Id 2.2V @ 55µA Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6475pF @ 25V FET Feature - Power Dissipation (Max) 105W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |