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| Datasheet | IPP80R1K2P7XKSA1 |
| File Size | 968.09 KB |
| Total Pages | 13 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPP80R1K2P7XKSA1 |
| Description | MOSFET N-CH 800V 4.5A TO220-3 |
IPP80R1K2P7XKSA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IPP80R1K2P7XKSA1
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Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id 3.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 500V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |