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| Datasheet | IPS13N03LA G |
| File Size | 547.14 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IPS13N03LA G, IPD13N03LA G, IPU13N03LA G, IPF13N03LA G |
| Description | MOSFET N-CH 25V 30A IPAK, MOSFET N-CH 25V 30A DPAK, MOSFET N-CH 25V 30A TO-251, MOSFET N-CH 25V 30A DPAK |
IPS13N03LA G - Infineon Technologies
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1043pF @ 15V FET Feature - Power Dissipation (Max) 46W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1043pF @ 15V FET Feature - Power Dissipation (Max) 46W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1043pF @ 15V FET Feature - Power Dissipation (Max) 46W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO251-3-1 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1043pF @ 15V FET Feature - Power Dissipation (Max) 46W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package P-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |