Datasheet | IPU78CN10N G |
File Size | 621.19 KB |
Total Pages | 13 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IPU78CN10N G, IPI80CN10N G, IPB79CN10N G |
Description | MOSFET N-CH 100V 13A TO251-3, MOSFET N-CH 100V 13A TO262-3, MOSFET N-CH 100V 13A TO263-3 |
IPU78CN10N G - Infineon Technologies
The Products You May Be Interested In
IPU78CN10N G | Infineon Technologies | MOSFET N-CH 100V 13A TO251-3 | 432 More on Order |
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IPI80CN10N G | Infineon Technologies | MOSFET N-CH 100V 13A TO262-3 | 395 More on Order |
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IPB79CN10N G | Infineon Technologies | MOSFET N-CH 100V 13A TO263-3 | 429 More on Order |
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Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V FET Feature - Power Dissipation (Max) 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V FET Feature - Power Dissipation (Max) 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 79mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V FET Feature - Power Dissipation (Max) 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |