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| Datasheet | IRD3CH101DB6 |
| File Size | 222.56 KB |
| Total Pages | 6 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRD3CH101DB6 |
| Description | DIODE GEN PURP 1.2KV 200A DIE |
IRD3CH101DB6 - Infineon Technologies
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IRD3CH101DB6 | Infineon Technologies | DIODE GEN PURP 1.2KV 200A DIE | 419 More on Order |
URL Link
www.oemstron.com/datasheet/IRD3CH101DB6
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 2.7V @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 360ns Current - Reverse Leakage @ Vr 3.6µA @ 1200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Die Operating Temperature - Junction -40°C ~ 175°C |