Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRD3CH82DB6 |
| File Size | 198.01 KB |
| Total Pages | 6 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRD3CH82DB6 |
| Description | DIODE GEN PURP 1.2KV 150A DIE |
IRD3CH82DB6 - Infineon Technologies
The Products You May Be Interested In
 |
IRD3CH82DB6 | Infineon Technologies | DIODE GEN PURP 1.2KV 150A DIE | 448 More on Order |
URL Link
www.oemstron.com/datasheet/IRD3CH82DB6
|
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 150A Voltage - Forward (Vf) (Max) @ If 2.7V @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 355ns Current - Reverse Leakage @ Vr 3µA @ 1200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Die Operating Temperature - Junction -40°C ~ 150°C |