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| Datasheet | IRF1010NLPBF |
| File Size | 292.61 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IRF1010NLPBF, IRF1010NSPBF, IRF1010NSTRRPBF, IRF1010NSTRLPBF |
| Description | MOSFET N-CH 55V 85A TO-262, MOSFET N-CH 55V 85A D2PAK, MOSFET N-CH 55V 85A D2PAK, MOSFET N-CH 55V 85A D2PAK |
IRF1010NLPBF - Infineon Technologies
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URL Link
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |