Datasheet | IRF2804STRR7PP |
File Size | 263.09 KB |
Total Pages | 10 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IRF2804STRR7PP, IRF2804STRL-7P, IRF2804STRL7PP |
Description | MOSFET N-CH 40V 160A D2PAK-7, MOSFET N-CH 40V 160A D2PAK7, MOSFET N-CH 40V 160A D2PAK-7 |
IRF2804STRR7PP - Infineon Technologies
The Products You May Be Interested In
IRF2804STRR7PP | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK-7 | 412 More on Order |
|
IRF2804STRL-7P | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK7 | 112 More on Order |
|
IRF2804STRL7PP | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK-7 | 160 More on Order |
URL Link
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 160A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 160A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 160A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |