Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF3704ZCSTRLP |
| File Size | 352.2 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | IRF3704ZCSTRLP, IRF3704ZCLPBF, IRF3704ZCSTRRP |
| Description | MOSFET N-CH 20V 67A D2PAK, MOSFET N-CH 20V 67A TO-262, MOSFET N-CH 20V 67A D2PAK |
IRF3704ZCSTRLP - Infineon Technologies
The Products You May Be Interested In
 |
IRF3704ZCSTRLP | Infineon Technologies | MOSFET N-CH 20V 67A D2PAK | 352 More on Order |
 |
IRF3704ZCLPBF | Infineon Technologies | MOSFET N-CH 20V 67A TO-262 | 228 More on Order |
|
IRF3704ZCSTRRP | Infineon Technologies | MOSFET N-CH 20V 67A D2PAK | 459 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 21A, 10V Vgs(th) (Max) @ Id 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 21A, 10V Vgs(th) (Max) @ Id 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 21A, 10V Vgs(th) (Max) @ Id 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |