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IRF630NSTRR Datasheet

IRF630NSTRR Cover
DatasheetIRF630NSTRR
File Size243.91 KB
Total Pages12
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRF630NSTRR, IRF630NL, IRF630NS
Description MOSFET N-CH 200V 9.3A D2PAK, MOSFET N-CH 200V 9.3A TO-262, MOSFET N-CH 200V 9.3A D2PAK

IRF630NSTRR - Infineon Technologies

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The Products You May Be Interested In

IRF630NSTRR IRF630NSTRR Infineon Technologies MOSFET N-CH 200V 9.3A D2PAK 382

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IRF630NL IRF630NL Infineon Technologies MOSFET N-CH 200V 9.3A TO-262 329

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IRF630NS IRF630NS Infineon Technologies MOSFET N-CH 200V 9.3A D2PAK 247

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URL Link

IRF630NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

575pF @ 25V

FET Feature

-

Power Dissipation (Max)

82W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF630NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

575pF @ 25V

FET Feature

-

Power Dissipation (Max)

82W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRF630NS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

575pF @ 25V

FET Feature

-

Power Dissipation (Max)

82W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB