Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF6665TR1 |
| File Size | 606.98 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF6665TR1, IRF6665 |
| Description | MOSFET N-CH 100V DIRECTFET-SH, MOSFET N-CH 100V DIRECTFET-SH |
IRF6665TR1 - Infineon Technologies
The Products You May Be Interested In
 |
IRF6665TR1 | Infineon Technologies | MOSFET N-CH 100V DIRECTFET-SH | 470 More on Order |
 |
IRF6665 | Infineon Technologies | MOSFET N-CH 100V DIRECTFET-SH | 164 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 2.2W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SH Package / Case DirectFET™ Isometric SH |
Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 2.2W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SH Package / Case DirectFET™ Isometric SH |