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Datasheet | IRF734PBF |
File Size | 113.39 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IRF734PBF, IRF734L, IRF734 |
Description | MOSFET N-CH 450V 4.9A TO-220AB, MOSFET N-CH 450V 4.9A TO-262, MOSFET N-CH 450V 4.9A TO-220AB |
IRF734PBF - Vishay Siliconix
![IRF734PBF Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0001.jpg)
![IRF734PBF Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0002.jpg)
![IRF734PBF Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0003.jpg)
![IRF734PBF Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0004.jpg)
![IRF734PBF Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0005.jpg)
![IRF734PBF Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0006.jpg)
![IRF734PBF Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0007.jpg)
![IRF734PBF Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/irf734pbf-0008.jpg)
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |