Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF7350TRPBF |
| File Size | 308.53 KB |
| Total Pages | 16 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF7350TRPBF, IRF7350PBF |
| Description | MOSFET N/P-CH 100V 2.1A 8-SOIC, MOSFET N/P-CH 100V 8SOIC |
IRF7350TRPBF - Infineon Technologies
The Products You May Be Interested In
 |
IRF7350TRPBF | Infineon Technologies | MOSFET N/P-CH 100V 2.1A 8-SOIC | 393 More on Order |
 |
IRF7350PBF | Infineon Technologies | MOSFET N/P-CH 100V 8SOIC | 145 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.1A, 1.5A Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.1A, 1.5A Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |