Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF7463TR |
| File Size | 165.42 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF7463TR, IRF7463 |
| Description | MOSFET N-CH 30V 14A 8-SOIC, MOSFET N-CH 30V 14A 8-SOIC |
IRF7463TR - Infineon Technologies
The Products You May Be Interested In
URL Link
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |