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| Datasheet | IRF7706GTRPBF |
| File Size | 234.78 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF7706GTRPBF |
| Description | MOSFET P-CH 30V 7A 8-TSSOP |
IRF7706GTRPBF - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IRF7706GTRPBF
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Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2211pF @ 25V FET Feature - Power Dissipation (Max) 1.51W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |