Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF7807D1TR |
| File Size | 117.87 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF7807D1TR, IRF7807D1 |
| Description | MOSFET N-CH 30V 8.3A 8-SOIC, MOSFET N-CH 30V 8.3A 8-SOIC |
IRF7807D1TR - Infineon Technologies
The Products You May Be Interested In
 |
IRF7807D1TR | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 127 More on Order |
 |
IRF7807D1 | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | 428 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.5W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |