Datasheet | IRF7832ZTR |
File Size | 265.29 KB |
Total Pages | 10 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IRF7832ZTR, IRF7832Z |
Description | MOSFET N-CH 30V 21A 8-SOIC, MOSFET N-CH 30V 21A 8-SOIC |
IRF7832ZTR - Infineon Technologies
The Products You May Be Interested In
IRF7832ZTR | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 481 More on Order |
|
IRF7832Z | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 128 More on Order |
URL Link
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 21A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3860pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 21A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3860pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |