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IRF9910 Datasheet

IRF9910 Cover
DatasheetIRF9910
File Size279.62 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRF9910, IRF9910TR
Description MOSFET 2N-CH 20V 10A 8-SOIC, MOSFET 2N-CH 20V 10A 8-SOIC

IRF9910 - Infineon Technologies

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URL Link

IRF9910

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10A, 12A

Rds On (Max) @ Id, Vgs

13.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

IRF9910TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10A, 12A

Rds On (Max) @ Id, Vgs

13.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO