Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRFB13N50A |
| File Size | 293.47 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRFB13N50A, IRFB13N50APBF |
| Description | MOSFET N-CH 500V 14A TO-220AB, MOSFET N-CH 500V 14A TO-220AB |
IRFB13N50A - Vishay Siliconix
The Products You May Be Interested In
 |
IRFB13N50A | Vishay Siliconix | MOSFET N-CH 500V 14A TO-220AB | 417 More on Order |
 |
IRFB13N50APBF | Vishay Siliconix | MOSFET N-CH 500V 14A TO-220AB | 2827 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1910pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1910pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |