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| Datasheet | IRFBF30SPBF |
| File Size | 266.28 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | IRFBF30SPBF, IRFBF30STRR, IRFBF30STRL, IRFBF30S, IRFBF30STRLPBF |
| Description | MOSFET N-CH 900V 3.6A D2PAK, MOSFET N-CH 900V 3.6A D2PAK, MOSFET N-CH 900V 3.6A D2PAK, MOSFET N-CH 900V 3.6A D2PAK, MOSFET N-CH 900V 3.6A D2PAK |
IRFBF30SPBF - Vishay Siliconix
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |