Datasheet | IRFI620 |
File Size | 1,756.81 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IRFI620, IRFI620G, IRFI620GPBF |
Description | MOSFET N-CH 200V 4.1A TO220FP, MOSFET N-CH 200V 4.1A TO220FP, MOSFET N-CH 200V 4.1A TO220FP |
IRFI620 - Vishay Siliconix
The Products You May Be Interested In
IRFI620 | Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | 120 More on Order |
|
IRFI620G | Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | 284 More on Order |
|
IRFI620GPBF | Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | 1530 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |