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IRFI9Z14G Datasheet

IRFI9Z14G Cover
DatasheetIRFI9Z14G
File Size1,584.3 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRFI9Z14G, IRFI9Z14GPBF
Description MOSFET P-CH 60V 5.3A TO220FP, MOSFET P-CH 60V 5.3A TO220FP

IRFI9Z14G - Vishay Siliconix

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IRFI9Z14G IRFI9Z14G Vishay Siliconix MOSFET P-CH 60V 5.3A TO220FP 146

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IRFI9Z14GPBF IRFI9Z14GPBF Vishay Siliconix MOSFET P-CH 60V 5.3A TO220FP 1765

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URL Link

IRFI9Z14G

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

-

Power Dissipation (Max)

27W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

IRFI9Z14GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

-

Power Dissipation (Max)

27W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab