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| Datasheet | IRFIB8N50KPBF |
| File Size | 139.68 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRFIB8N50KPBF, IRFIB8N50K |
| Description | MOSFET N-CH 500V 6.7A TO220FP, MOSFET N-CH 500V 6.7A TO220FP |
IRFIB8N50KPBF - Vishay Siliconix
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 25V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 25V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |