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| Datasheet | IRFR2605 |
| File Size | 167.96 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRFR2605 |
| Description | MOSFET N-CH 55V 19A D-PAK |
IRFR2605 - Infineon Technologies
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IRFR2605 | Infineon Technologies | MOSFET N-CH 55V 19A D-PAK | 268 More on Order |
URL Link
www.oemstron.com/datasheet/IRFR2605
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 85mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |