Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IRFR3706CTRLPBF Datasheet

IRFR3706CTRLPBF Cover
DatasheetIRFR3706CTRLPBF
File Size257.93 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRFR3706CTRLPBF, IRFR3706CTRRPBF, IRFR3706CPBF
Description MOSFET N-CH 20V 75A DPAK, MOSFET N-CH 20V 75A DPAK, MOSFET N-CH 20V 75A DPAK

IRFR3706CTRLPBF - Infineon Technologies

IRFR3706CTRLPBF Datasheet Page 1
IRFR3706CTRLPBF Datasheet Page 2
IRFR3706CTRLPBF Datasheet Page 3
IRFR3706CTRLPBF Datasheet Page 4
IRFR3706CTRLPBF Datasheet Page 5
IRFR3706CTRLPBF Datasheet Page 6
IRFR3706CTRLPBF Datasheet Page 7
IRFR3706CTRLPBF Datasheet Page 8
IRFR3706CTRLPBF Datasheet Page 9
IRFR3706CTRLPBF Datasheet Page 10
IRFR3706CTRLPBF Datasheet Page 11

The Products You May Be Interested In

IRFR3706CTRLPBF IRFR3706CTRLPBF Infineon Technologies MOSFET N-CH 20V 75A DPAK 265

More on Order

IRFR3706CTRRPBF IRFR3706CTRRPBF Infineon Technologies MOSFET N-CH 20V 75A DPAK 384

More on Order

IRFR3706CPBF IRFR3706CPBF Infineon Technologies MOSFET N-CH 20V 75A DPAK 128

More on Order

URL Link

IRFR3706CTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 10V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3706CTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 10V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3706CPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 10V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63