Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IRFZ48NL Datasheet

IRFZ48NL Cover
DatasheetIRFZ48NL
File Size136.79 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRFZ48NL, IRFZ48NSTRR, 94-2989
Description MOSFET N-CH 55V 64A TO-262, MOSFET N-CH 55V 64A D2PAK, MOSFET N-CH 55V 64A D2PAK

IRFZ48NL - Infineon Technologies

IRFZ48NL Datasheet Page 1
IRFZ48NL Datasheet Page 2
IRFZ48NL Datasheet Page 3
IRFZ48NL Datasheet Page 4
IRFZ48NL Datasheet Page 5
IRFZ48NL Datasheet Page 6
IRFZ48NL Datasheet Page 7
IRFZ48NL Datasheet Page 8
IRFZ48NL Datasheet Page 9
IRFZ48NL Datasheet Page 10
IRFZ48NL Datasheet Page 11

The Products You May Be Interested In

IRFZ48NL IRFZ48NL Infineon Technologies MOSFET N-CH 55V 64A TO-262 274

More on Order

IRFZ48NSTRR IRFZ48NSTRR Infineon Technologies MOSFET N-CH 55V 64A D2PAK 243

More on Order

94-2989 94-2989 Infineon Technologies MOSFET N-CH 55V 64A D2PAK 322

More on Order

URL Link

IRFZ48NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1970pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFZ48NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1970pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

94-2989

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1970pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB