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| Datasheet | IRG7CH30K10EF |
| File Size | 190.99 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRG7CH30K10EF |
| Description | IGBT CHIP WAFER |
IRG7CH30K10EF - Infineon Technologies
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IRG7CH30K10EF | Infineon Technologies | IGBT CHIP WAFER | 322 More on Order |
URL Link
www.oemstron.com/datasheet/IRG7CH30K10EF
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Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 10A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.56V @ 15V, 10A Power - Max - Switching Energy - Input Type Standard Gate Charge 4.8nC Td (on/off) @ 25°C 10ns/90ns Test Condition 600V, 10A, 22Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |