Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRG8CH137K10F |
| File Size | 191.65 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRG8CH137K10F |
| Description | IGBT CHIP WAFER |
IRG8CH137K10F - Infineon Technologies
The Products You May Be Interested In
 |
IRG8CH137K10F | Infineon Technologies | IGBT CHIP WAFER | 173 More on Order |
URL Link
www.oemstron.com/datasheet/IRG8CH137K10F
|
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 150A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2V @ 15V, 150A Power - Max - Switching Energy - Input Type Standard Gate Charge 820nC Td (on/off) @ 25°C 115ns/570ns Test Condition 600V, 150A, 2Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |