Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRG8P50N120KD-EPBF |
| File Size | 603.57 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRG8P50N120KD-EPBF, IRG8P50N120KDPBF |
| Description | IGBT 1200V 80A 305W TO-247AD, IGBT 1200V 80A 305W TO-247AC |
IRG8P50N120KD-EPBF - Infineon Technologies
The Products You May Be Interested In
 |
IRG8P50N120KD-EPBF | Infineon Technologies | IGBT 1200V 80A 305W TO-247AD | 158 More on Order |
 |
IRG8P50N120KDPBF | Infineon Technologies | IGBT 1200V 80A 305W TO-247AC | 319 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 105A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A Power - Max 350W Switching Energy 2.3mJ (on), 1.9mJ (off) Input Type Standard Gate Charge 315nC Td (on/off) @ 25°C 35ns/190ns Test Condition 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr) 170ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 105A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A Power - Max 350W Switching Energy 2.3mJ (on), 1.9mJ (off) Input Type Standard Gate Charge 315nC Td (on/off) @ 25°C 35ns/190ns Test Condition 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr) 170ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |