![IRL3302STRR Cover](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0001.jpg)
Datasheet | IRL3302STRR |
File Size | 96.04 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IRL3302STRR, IRL3302STRL, IRL3302S |
Description | MOSFET N-CH 20V 39A D2PAK, MOSFET N-CH 20V 39A D2PAK, MOSFET N-CH 20V 39A D2PAK |
IRL3302STRR - Infineon Technologies
![IRL3302STRR Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0001.jpg)
![IRL3302STRR Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0002.jpg)
![IRL3302STRR Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0003.jpg)
![IRL3302STRR Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0004.jpg)
![IRL3302STRR Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0005.jpg)
![IRL3302STRR Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0006.jpg)
![IRL3302STRR Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0007.jpg)
![IRL3302STRR Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0008.jpg)
![IRL3302STRR Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/irl3302strr-0009.jpg)
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IRL3302S | Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | 425 More on Order |
URL Link
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 20mOhm @ 23A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 20mOhm @ 23A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 20mOhm @ 23A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |