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| Datasheet | IRL60B216 |
| File Size | 733.97 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRL60B216 |
| Description | MOSFET N-CH 60V 195A |
IRL60B216 - Infineon Technologies
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IRL60B216 | Infineon Technologies | MOSFET N-CH 60V 195A | 1105 More on Order |
URL Link
www.oemstron.com/datasheet/IRL60B216
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Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 258nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15570pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |