Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRLBA1304PPBF |
| File Size | 104.06 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | IRLBA1304PPBF, IRLBA1304P, IRLBA1304 |
| Description | MOSFET N-CH 40V 185A SUPER-220, MOSFET N-CH 40V 185A SUPER-220, MOSFET N-CH 40V 185A SUPER-220 |
IRLBA1304PPBF - Infineon Technologies
The Products You May Be Interested In
 |
IRLBA1304PPBF | Infineon Technologies | MOSFET N-CH 40V 185A SUPER-220 | 418 More on Order |
 |
IRLBA1304P | Infineon Technologies | MOSFET N-CH 40V 185A SUPER-220 | 257 More on Order |
 |
IRLBA1304 | Infineon Technologies | MOSFET N-CH 40V 185A SUPER-220 | 356 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 185A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 110A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 7660pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 185A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 110A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 7660pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 185A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 110A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 7660pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |