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| Datasheet | IRLU014N |
| File Size | 116.16 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IRLU014N, IRLR014NTRR, IRLR014NTR, IRLR014NTRL |
| Description | MOSFET N-CH 55V 10A I-PAK, MOSFET N-CH 55V 10A DPAK, MOSFET N-CH 55V 10A DPAK, MOSFET N-CH 55V 10A DPAK |
IRLU014N - Infineon Technologies
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |